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1. Structure: A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector). 2. Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector.

BD647 NPN Darlington Transistor Datasheet

Description PNP Power Transistor B647 Datasheet (HTML) - Shenzhen Jingdao Electronic Co.,Ltd B647 Product details Features： High switching speed Wide safe operation area Applications ： Electronical Ballasts for fluorescent lighting Charger and Switch mode power supplies Similar Part No. - B64 7 More results Similar Description - B647

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B647 Hoja de datos, B647 datasheet, Hitachi Semiconductor - PNP Transistor - 2SB647, Hoja Técnica, B647 pdf, dataark, wiki, arduino, regulador, amplificador, circuito, Distribuidor PDF B647 Data sheet ( Hoja de datos ) Número de pieza: B647: Descripción: PNP Transistor - 2SB647:

B647 datasheet(3/3 Pages) JINGDAO PNP Power Transistor

PDF Download HTML Chat AI 2SB647 Datasheet (PDF) - Hitachi Semiconductor Description Silicon PNP Epitaxial 2SB647 Datasheet (HTML) - Hitachi Semiconductor 2SB647 Product details 1. Low frequency power amplifier 2. Complementary pair with 2SD667/A Similar Part No. - 2SB647 More results Similar Description - 2SB647 More results

2SB647 B647 TRANSISTOR PNP 1A 80V TO92L

Transistor Catalog 2SB647 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SB647 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.9 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 80 V Maximum Collector Current |Ic max|: 1 A Max.

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isc Silicon NPN Darlington Power Transistor BD647DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min) (BR)CEOHigh DC Current Gain: h = 750 (Min) @I = 3AFE CLow Saturation VoltageComplement to Type BD648Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-.

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B647A Datasheet - 100V, PNP Transistor, TO-92, B647A pdf, B647A pinout, equivalent, B647A schematic, 2SB647A manual, data.. -1A, Silicon PNP Epitaxial Transistor. Features. 1. Low frequency power amplifier. 2. Complementary pair with 2SD667/A. B647. This entry was posted in Datasheet and tagged PNP, Transistor. Bookmark the.

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B647,! -ˇ . ///, . ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2SB647TO-92MODBulk 2SB647-TATO-92MODTape 2SB647ATO-92MODBulk 2SB647A-TATO-92MODTape B647 500pcs/Bag. TO-92MODPlastic-Encapsulate Transistors www.jscj-elec.com 1 Rev. - 1.0 ˘ ˇ ˇ

Transistor A1013 A940 A970 B647 C2073 C2240 C2383 D438 D667 MPSA42 MPSA92 2N2907 PN2222 2N5088

B647 Datasheet. Part #: B647. Datasheet: 49Kb/3P. Manufacturer: Shenzhen Jingdao Electronic Co.,Ltd. Description: PNP Power Transistor. 1 Results.

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B647 datasheet, B647 PDF, B647 Pinout, Equivalent, Replacement - PNP Transistor - 2SB647 - Hitachi Semiconductor, Schematic, Circuit, Manual. B647 Datasheet PDF - PNP Transistor - 2SB647. What is B647? This electronic component, produced by the manufacturer "Hitachi Semiconductor",.

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B647 Datasheet : PNP Power Transistor, B647 PDF Download Shenzhen Jingdao Electronic Co.,Ltd, B647 Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits Electronic component search and free download site.

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Description: Silicon PNP Epitaxial. 38 Results. Datasheet: 47Kb/8P. Manufacturer: Renesas Technology Corp.

B647 2SB647 TRANSISTOR

2S B647: Silicon PNP Transistor: Hitachi Semiconductor: 3: 2S B647: Transistors>Amplifiers/Bipolar: Renesas: 4: 2S B647-B: TO-92MOD Plastic-Encapsulate Biploar Transistors: Micro Commercial Components: 5: 2S B647-C: TO-92MOD Plastic-Encapsulate Biploar Transistors: Micro Commercial Components: 6: 2S B647-D: TO-92MOD Plastic-Encapsulate Biploar.

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The B647 is -80V, -1A, Silicon PNP Epitaxial Transistor. A PNP transistor is a type of bipolar junction transistor (BJT) with a different structure and polarity compared to an NPN transistor. Here are characteristics of PNP transistors: 1. Structure

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Features / Technical Specifications: Package Type: TO-92L / TO-92MOD Transistor Type: PNP Max Collector Current (I C ): -1A Max Collector-Emitter Voltage (V CE ): -80V Max Collector-Base Voltage (V CB ): -120V Max Emitter-Base Voltage (VEBO): -6V Max Collector Dissipation (Pc): 0.9 Watt Max Transition Frequency (fT): 140 MHz